Magnetic-Tunnel-Junction-Based True Random-Number Generator with Enhanced Generation Rate

被引：10

作者：

Chen, Xiheng ^{[1
,2
]}

Zhang, Jiabin ^{[1
,2
]}

Xiao, Jiang ^{[1
,2
,3
,4
,5
,6
]}

机构：

[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Shanghai Qi Zhi Inst, Shanghai 200232, Peoples R China

[4] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China

[5] Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China

[6] Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China

来源：

PHYSICAL REVIEW APPLIED | 2022年 / 18卷 / 02期

关键词：

RELAXATION;

D O I：

10.1103/PhysRevApplied.18.L021002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A magnetic tunnel junction (MTJ) is a bistable magnetic device and typically used as magnetic random access memory. When the potential barrier separating the two bistable states is reduced, such a device can also be used as a true random-number generator (TRNG). Here we show that a millitesla magnetic field transverse to the magnetization equilibrium direction can effectively control the potential barrier in an MTJ-based TRNG, and realize a random-number generation rate up to gigahertz, several orders of mag-nitude higher than the existing MTJ-based devices. Furthermore, such field-modulating MTJ-TRNG can also function as a probabilistic bit with tunable activation time for the purpose of probabilistic computing.

引用

页数：6

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