Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

被引：6

作者：

Yasuda, K. ^{[1
]}

Niraula, M. ^{[1
]}

Namba, S. ^{[1
]}

Kondo, T. ^{[1
]}

Muramatsu, S. ^{[1
]}

Yamashita, H. ^{[1
]}

Wajima, Y. ^{[1
]}

Agata, Y. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 11期

基金：

日本学术振兴会;

关键词：

CdTe/Si; MOVPE; rapid thermal annealing; radiation detectors; GAMMA-RAY DETECTORS; THICK CDTE; FABRICATION;

D O I：

10.1007/s11664-013-2680-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-mu m-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700A degrees C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900A degrees C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n (+)-Si substrate.

引用

页码：3125 / 3128

页数：4

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[41] High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy [J].

Toivonen, J ;

Hakkarainen, T ;

Sopanen, M ;

Lipsanen, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) :456-460

[42] Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layers on InP substrates [J].

Oe, K .

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[44] Structure and surface properties of metalorganic vapor phase epitaxial CdTe and HgCdTe(111)B layers grown on vicinal GaAs(100) substrates [J].

Nishino, H ;

Murakami, S ;

Nishijima, Y .

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Kawamura, T ;

Fujikawa, S ;

Watanabe, Y .

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Hofmann, L ;

Knauer, A ;

Rechenberg, I ;

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Yamaguchi, Y ;

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Ito, R .

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[48] AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy [J].

Ishido, T ;

Funato, M ;

Hamaguchi, A ;

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Fujita, S .

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[49] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

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TAKEMURA, M ;

IDO, T .

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[50] Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy [J].

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