Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

被引：6

作者：

Yasuda, K. ^{[1
]}

Niraula, M. ^{[1
]}

Namba, S. ^{[1
]}

Kondo, T. ^{[1
]}

Muramatsu, S. ^{[1
]}

Yamashita, H. ^{[1
]}

Wajima, Y. ^{[1
]}

Agata, Y. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 11期

基金：

日本学术振兴会;

关键词：

CdTe/Si; MOVPE; rapid thermal annealing; radiation detectors; GAMMA-RAY DETECTORS; THICK CDTE; FABRICATION;

D O I：

10.1007/s11664-013-2680-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-mu m-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700A degrees C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900A degrees C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n (+)-Si substrate.

引用

页码：3125 / 3128

页数：4

共 50 条

[31] The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy [J].

Liu, XL ;

Wang, LS ;

Lu, DC ;

Wang, D ;

Wang, XH ;

Lin, LY .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :287-290

[32] Metalorganic-hydride vapor phase epitaxy growth of GaN/AIN on Si substrates [J].

Lee, HJ ;

Kim, KH ;

Yi, JY ;

Yang, M ;

Ahn, HS ;

Chang, JH ;

Kim, HS ;

Yi, SN ;

Lee, SC ;

Kim, SW .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 :S813-S815

[33] Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates [J].

Kim, Kwang-Chon ;

Kim, Hyun Jae ;

Suh, Sang-Hee ;

Carmody, M. ;

Sivananthan, S. ;

Kim, Jin-Sang .

JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) :863-867

[34] Si-doping into GaAs grown by metalorganic vapor phase epitaxy using bisdiisopropylaminosilane [J].

Ochimizu, H ;

Tanaka, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :58-62

[35] Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy [J].

Kusakabe, K ;

Furuzuki, T ;

Ohkawa, K .

PHYSICA B-CONDENSED MATTER, 2006, 376 :520-522

[36] Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine [J].

Hsu, YJ ;

Hong, LS ;

Tsay, JE .

JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) :144-151

[37] Cyclohexylphosphine: synthesis and application to metalorganic vapor-phase epitaxy of InP [J].

Franzheld, R ;

Marschall, C ;

Recker, C ;

Wassermann, BC ;

Schumann, H ;

Benndorf, G ;

Gottschalch, V .

JOURNAL OF CRYSTAL GROWTH, 1999, 206 (1-2) :51-59

[38] Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy [J].

Hofmann, L ;

Knauer, A ;

Rechenberg, I ;

Weyers, M ;

Stolz, W .

JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) :255-262

[39] Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy [J].

Gurskii, AL ;

Hamadeh, H ;

Körfer, H ;

Yablonskii, GP ;

Zelenkovskii, VM ;

Bezjazychnaja, TV ;

Heuken, M ;

Heime, K .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (04) :430-435

[40] Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy [J].

A. L. Gurskii ;

H. Hamadeh ;

H. Körfer ;

G. P. Yablonskii ;

V. M. Zelenkovskii ;

T. V. Bezjazychnaja ;

M. Heuken ;

K. Heime .

Journal of Electronic Materials, 2000, 29 :430-435

← 1 2 3 4 5 →