Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

被引：16

作者：

Reine, M. B. ^{[1
,2
]}

Hairston, A. ^{[1
,2
]}

Lamarre, P. ^{[1
,2
]}

Wong, K. K. ^{[1
,2
]}

Tobin, S. P. ^{[2
]}

Sood, A. K. ^{[1
,2
]}

Cooke, C. ^{[1
,2
]}

Pophristic, M. ^{[3
]}

Guo, S. ^{[3
]}

Peres, B. ^{[3
]}

Singh, R. ^{[4
,5
]}

Eddy, C. R., Jr. ^{[4
,5
]}

Chowdhury, U. ^{[6
]}

Wong, M. M. ^{[6
]}

Dupuis, R. D. ^{[6
]}

Li, T. ^{[7
]}

DenBaars, S. P. ^{[7
]}

机构：

[1] BAE Syst, Lexington, MA 02421 USA

[2] BAE Syst, Nashua, NH 03064 USA

[3] Emcore Corp, Somerset, NJ USA

[4] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[5] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[6] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78712 USA

[7] Cree Lighting Co, Goleta, CA USA

来源：

SEMICONDUCTOR PHOTODETECTORS III | 2006年 / 6119卷

关键词：

GaN; AlGaN; solar-blind detectors; UV detectors; UV photodiodes; UV focal plane arrays;

D O I：

10.1117/12.653645

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reports the development of aluminum-gallium nitride (AlGaN or AlxGa1-xN) photodiode technology for high-operability 256x256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 nm spectral region. These hybrid UV FPAs consist of a 256x256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256x256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30x30 mu m(2). The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256x256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256x256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (sigma/mu) as low as 2.5%, A and zero-bias resistance median values as high as 1x10(16) ohm, corresponding to R(0)A products of 7x10(10) ohm-cm(2). Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.

引用

页数：15