Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

被引：6

作者：

Bonfiglio, Valentina ^{[1
]}

Iannaccone, Giuseppe ^{[1
,2
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56100 Pisa, Italy

[2] Univ Pisa, PUSL, SEED Ctr, I-56100 Pisa, Italy

来源：

SOLID-STATE ELECTRONICS | 2013年 / 84卷

关键词：

Nanoscale CMOS; CMOS Process variability; Sensitivity-analysis; Variability modeling; FLUCTUATIONS;

D O I：

10.1016/j.sse.2013.02.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate variability of a 32 nm flash memory cell and of 32 nm MOSFETs with a methodology based on sensitivity analysis performed with a limited number of TCAD simulations. We show that - as far as the standard deviation of the threshold voltage is concerned - our method provides results in very good agreement with those from three-dimensional atomistic statistical simulations, with a computational burden that is orders of magnitude smaller. We show that the proposed approach is a powerful tool to understand the role of the main variability sources and to explore the device design parameter space. (C) 2013 Published by Elsevier Ltd.

引用

页码：127 / 131

页数：5

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