Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene

被引：40

作者：

Alexander-Webber, J. A. ^{[1
]}

Baker, A. M. R. ^{[1
]}

Janssen, T. J. B. M. ^{[2
]}

Tzalenchuk, A. ^{[2
,3
]}

Lara-Avila, S. ^{[4
]}

Kubatkin, S. ^{[4
]}

Yakimova, R. ^{[5
]}

Piot, B. A. ^{[6
]}

Maude, D. K. ^{[6
]}

Nicholas, R. J. ^{[1
]}

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[3] Univ London, Dept Phys, Egham TW20 0EX, Surrey, England

[4] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[5] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[6] LNCMI CNRS UJF INSA UPS, F-38042 Grenoble 9, France

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

CYCLOTRON PHONON EMISSION; ENERGY LOSS RATES; RESISTANCE STANDARD; HETEROJUNCTIONS;

D O I：

10.1103/PhysRevLett.111.096601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I-c) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (rho(xx) = 0) shows a [1 - (T/T-c)(2)] dependence and persists up to T-c > 45 K at 29 T. With magnetic field Ic was found to increase alpha B-3/2 and T-c alpha B-2. As the Fermi energy approaches the Dirac point, the nu = 2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.

引用

页数：5

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