Long-lived femtosecond photon echo in thin films on localized exciton states at room temperature

被引：0

作者：

Vashurin, N. S. ^{[1
]}

Kompanets, V. O. ^{[2
]}

Popov, I. I. ^{[1
]}

Putilin, S. E. ^{[3
]}

Chekalin, S. V. ^{[2
]}

机构：

[1] Volga State Technol Univ, 3 Lenin Sq, Yoshkar Ola 424001, Russia

[2] Russian Acad Sci, Inst Spect, 5 Fizicheskaya Str, Troitsk 108840, Russia

[3] St Petersburg Natl Res Univ Informat Technol Mech, 49 Kronverksky Prospect, St Petersburg 197101, Russia

来源：

XI INTERNATIONAL SYMPOSIUM ON PHOTON ECHO AND COHERENT SPECTROSCOPY (PECS-2017) | 2017年 / 161卷

关键词：

D O I：

10.1051/epjconf/201716103007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Long-lived femtosecond photon echo was excited at room temperature in a two-photon regime on the charged exciton states (trion type) localized on the surface defects of a three-layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T-1 for the long-lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single-photon mode, the value was found not to exceed 600 fs.

引用

页数：2