Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors

被引：86

作者：

Park, Jaechul ^{[1
]}

Kim, Changjung ^{[1
]}

Kim, Sunil ^{[1
]}

Song, Hun ^{[1
]}

Kim, Sangwook

Kang, Donghun ^{[1
]}

Lim, Hyuck ^{[1
]}

Yin, Huaxiang ^{[1
]}

Jung, Ranju ^{[1
]}

Lee, Eunha ^{[2
]}

Lee, Jaecheol ^{[2
]}

Kwon, Kee-Won ^{[3
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device & Mat Lab, Yongin 449711, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 449711, Gyeonggi Do, South Korea

[3] Sungkyunkwan Univ, Semicond Syst Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 08期

关键词：

amorphous gallium-indium zinc-oxide thin film transistor (a-GIZO TFT); analog circuits; a-Si : H TFT; intersection point; MOSFET circuits; overlap distance; series resistance;

D O I：

10.1109/LED.2008.2000815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm(2)/V . s. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mu m from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.

引用

页码：879 / 881

页数：3

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