Conductivity relaxation in NiTiO3 at high temperatures

被引：21

作者：

Li, Teng ^{[1
]}

Wang, Chun Chang ^{[1
]}

Lei, Chang Mei ^{[1
]}

Sun, Xiao Hong ^{[1
]}

Wang, Guo Jing ^{[1
]}

Liu, Liu Na ^{[1
]}

机构：

[1] Anhui Univ, Sch Phys & Mat Sci, Lab Dielect Funct Mat, Hefei 230601, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Ceramics; Activation energy; Conductivity relaxation; Oxygen vacancy; DIELECTRIC-RELAXATION; TITANATE; CERAMICS; TRANSPORT; FILMS;

D O I：

10.1016/j.cap.2013.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

NiTiO3 ceramics were prepared via the traditional solid-state reaction route. The dielectric properties of NiTiO3 ceramics have been systematically investigated in the temperature range from room temperature to 1073 K NiTiO3 ceramics exhibit intrinsic dielectric response in the temperature range below 400 K. Two relaxations were observed in the temperature range higher than 400 K. The relaxation activation energy is 0.95 eV and 1.17 eV for the low- and high-temperature relaxations, respectively. Our results strongly indicate that the two relaxations are related to conductivity relaxation associated with the singly and doubly ionized oxygen vacancies. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：1728 / 1731

页数：4

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