Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

被引：13

作者：

Michez, A. ^{[1
]}

Boch, J. ^{[1
]}

Dhombres, S. ^{[1
,2
]}

Saigne, F. ^{[1
]}

Touboul, A. D. ^{[1
]}

Vaille, J-R. ^{[1
,3
]}

Dusseau, L. ^{[1
]}

Lorfevre, E. ^{[4
]}

Ecoffet, R. ^{[4
]}

机构：

[1] Univ Montpellier 2, IES UMR CNRS UM2 5214, F-34095 Montpellier 5, France

[2] SYSTHEIA, Montpellier, France

[3] Univ Nimes, F-30021 Nantes 01, France

[4] Ctr Natl Etud Spatiales, F-31401 Toulouse 9, France

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

RATE SENSITIVITY; GAIN DEGRADATION; BIPOLAR; MECHANISMS; HYDROGEN; ELDRS;

D O I：

10.1016/j.microrel.2013.07.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new TCAD modeling tool taking into account dose effects is presented: E.CO.R.C.E. It allows a study of dose and temperature dependence on a power MOSFET. Modeling results are compared to experimental data. It is shown that threshold voltage shift at room temperature can be modeled with a good accuracy using only one hole trap level. However, temperature effect on threshold voltage shift cannot be fitted with less than four hole traps levels. More generally, this tool allows a better understanding of mechanisms involved during irradiation. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1306 / 1310

页数：5

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