Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces

被引：11

作者：

Hosoi, Takuji ^{[1
]}

Nagai, Daisuke ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 09期

关键词：

SILICON-CARBIDE;

D O I：

10.7567/JJAP.54.098002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The kinetics of dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces were systematically examined to clarify the interface-reaction-limited growth depending on the oxidizing agent. A gradually retarded oxide growth in the early stage of oxidation (<15 nm) and then a linear growth corresponding to a real interface-reaction-limited growth extending to 150 nm in oxide thickness were observed regardless of the oxidation ambient. It was also found that, unlike in the case of Si oxidation, water oxidants play no significant role in enhancing SiC oxidation. The initial retarded oxidation rate and characteristic linear regime are discussed on the basis of the SiO2/SiC interfacial structures. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

共 22 条

[1]

Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO

[2]

2-F

[3] Relationship between 4H-SiC/SiO2 transition layer thickness and mobility [J].

Biggerstaff, T. L. ;

Reynolds, C. L., Jr. ;

Zheleva, T. ;

Lelis, A. ;

Habersat, D. ;

Haney, S. ;

Ryu, S. -H. ;

Agarwal, A. ;

Duscher, G. .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[4] High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy [J].

Chang, KC ;

Nuhfer, NT ;

Porter, LM ;

Wahab, Q .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2186-2188

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[6] Semiconductor defects at the 4H-SiC(0001)/SiO2 interface [J].

Devynck, Fabien ;

Pasquarello, Alfredo .

PHYSICA B-CONDENSED MATTER, 2007, 401 :556-559

[7] First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation [J].

Gavrikov, Alexey ;

Knizhnik, Andrey ;

Safonov, Andrey ;

Scherbinin, Andrey ;

Bagatur'yants, Alexander ;

Potapkin, Boris ;

Chatterjee, Aveek ;

Matocha, Kevin .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)

[8] Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates [J].

Hosoi, Takuji ;

Kozono, Kohei ;

Uenishi, Yusuke ;

Mitani, Shuhei ;

Nakano, Yuki ;

Nakamura, Takashi ;

Shimura, Takayoshi ;

Watanabe, Heiji .

SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 :342-+

[9] Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface [J].

Ikeguchi, Daisuke ;

Hosoi, Takuji ;

Nakano, Yuki ;

Nakamura, Takashi ;

Shimura, Takayoshi ;

Watanabe, Heiji .

APPLIED PHYSICS LETTERS, 2014, 104 (01)

[10] Universal theory of Si oxidation rate and importance of interfacial Si emission [J].

Kageshima, H ;

Shiraishi, K ;

Uematsu, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L971-L974

← 1 2 3 →