ChemFET Sensor: nanorods of nickel-substituted Metal-Organic framework for detection of SO2

被引:33
作者
Ingle, Nikesh [1 ]
Sayyad, Pasha [1 ]
Bodkhe, Gajanan [1 ]
Mahadik, Manasi [1 ]
AL-Gahouari, Theeazen [1 ]
Shirsat, Sumedh [2 ]
Shirsat, Mahendra D. [1 ]
机构
[1] Dr Babasaheb Ambedkar Marathwada Univ, RUSA Ctr Adv Sensor Technol, Dept Phys, Aurangabad 431004, Maharashtra, India
[2] Jawaharlal Nehru Engn Coll, Dept Elect & Telecommun Engn, Aurangabad 431001, Maharashtra, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 09期
关键词
Metal-Organic frameworks; Sulfur dioxide; Field effect transistor; GAS-SENSING PROPERTIES; SULFUR-DIOXIDE; COMPLEX;
D O I
10.1007/s00339-020-03907-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ChemFET-based nanorods of nickel substituted Metal-Organic framework (MOF) were explored for detection of SO(2)gas analytes. Nanorods of nickel based MOF (Ni3HHTP2) were synthesized by chemical method at 90 degrees C temperature. The structural, surface morphological and spectroscopic characterizations were explored using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Fourier Transformation Infrared (FTIR), respectively. The back gated Field Effect Transistor (FET) was constructed using gold microelectrodes having 3 mu m gap referring as source and drain on silicon/silicon dioxide (gate) substrate and Ni3HHTP2MOF used to bridge channel between source and drain. The transfer and output characteristics of Ni3HHTP2MOF based FET were studied in present investigation. Sensing behaviors of Ni3HHTP2MOF based FET was explored at lower detection limit 625 ppb (which is well below than permeable exposure level (PEL) level of SO(2)suggested by OSHA) for SO(2)gas analytes. Ni3HHTP2MOF based FET shows p type behavior with carrier mobility 8.5 x 10(-2) cm(2)/Vs and threshold voltage (V-TH = 0.6 V).
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页数:9
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