Growth of TiC films by thermal laser-assisted chemical vapour deposition

被引：7

作者：

Parames, MLF ^{[1
]}

Conde, O ^{[1
]}

机构：

[1] UNIV LISBON, DEPT PHYS, P-1700 LISBON, PORTUGAL

来源：

APPLIED SURFACE SCIENCE | 1997年 / 109卷

关键词：

D O I：

10.1016/S0169-4332(96)00633-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The kinetics in thermal laser-assisted chemical vapour deposition (LCVD) of titanium carbide (TiC) films and the influence of growth conditions on the structure and morphology of the deposits have been investigated. TiC spots were deposited onto silica substrates using a CW TEM00 CO2 laser beam. The reaction gas mixture consisted of TiCl4, CH4 and H-2 and the ratios of the partial pressures of the reactants were varied. The films were analysed by X-ray diffractometry (XRD), micro-Raman spectroscopy, scanning electron microscopy (SEM) and profilometry.

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收藏

页码：554 / 558

页数：5

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