A new compact temperature-compensated CMOS current reference

被引：93
作者：
Fiori, F [1 ]
Crovetti, PS [1 ]
机构：
[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2005年 / 52卷 / 11期
关键词：
analog integrated circuits; current reference; curvature compensation; MOS integrated circuits; temperature compensation; temperature drift;
D O I：
10.1109/TCSII.2005.852529
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the relationships between design and technology process parameters are derived. These circuits have been designed by a 0.35 mu m BiCMOS technology process and the thermal drift of the reference current has been evaluated by computer simulations. They show good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm/degrees C in the temperature range between -30 degrees C and 100 degrees C.
引用
收藏
页码：724 / 728
页数：5
相关论文
共 17 条
[1]   SIMPLE 3-TERMINAL IC BANDGAP REFERENCE [J].
BROKAW, AP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (06) :388-393
[2]   NOVEL CMOS REFERENCE CURRENT GENERATOR [J].
CERID, O ;
BALKIR, S ;
DUNDAR, G .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1995, 78 (06) :1113-1118
[3]   Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits [J].
Filanovsky, IM ;
Allam, A .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2001, 48 (07) :876-884
[4]   A CURVATURE-CORRECTED LOW-VOLTAGE BANDGAP REFERENCE [J].
GUNAWAN, M ;
MEIJER, GCM ;
FONDERIE, J ;
HUIJSING, JH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (06) :667-670
[5]   PRECISION REFERENCE VOLTAGE SOURCE [J].
KUIJK, KE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) :222-226
[6]   All-CMOS temperature independent current reference [J].
Lee, CH ;
Park, HJ .
ELECTRONICS LETTERS, 1996, 32 (14) :1280-1281
[7]   A NEW CURVATURE-CORRECTED BANDGAP REFERENCE [J].
MEIJER, GCM ;
SCHMALE, PC ;
VANZALINGE, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :1139-1143
[8]   A CMOS TEMPERATURE-COMPENSATED CURRENT REFERENCE [J].
SANSEN, WM ;
OPTEYNDE, F ;
STEYAERT, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (03) :821-824
[9]   A PRECISION CURVATURE-COMPENSATED CMOS BANDGAP REFERENCE [J].
SONG, BS ;
GRAY, PR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (06) :634-643
[10]   A TEMPERATURE-STABILIZED SOI VOLTAGE REFERENCE BASED ON THRESHOLD VOLTAGE DIFFERENCE BETWEEN ENHANCEMENT AND DEPLETION NMOSFETS [J].
SONG, HJ ;
KIM, CK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (06) :671-677
12