Accurate measurement of spherical and astigmatic aberrations by a phase shift grating reticle

被引:4
作者
Nomura, H [1 ]
机构
[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 235, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
photolithography; aberration; phase shift mask; coherent factor; diffraction grating;
D O I
10.1143/JJAP.40.6316
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new grating structure is proposed for measuring aberrations in lithography lenses. The grating structure on a reticle comprising opaque lines. naked lines and pi /2-phase-shifted-grooves with their width ratio equal to 2/1/1 has a property such that either of the two first-order diffracted rays disappears entirely. The other first-order ray interferes with the zeroth-order ray to form tilted standing waves. Since a resist pattern of the grating is formed on top lines or valley lines of the standing waves. it modes with perfect linearity upon defocus. In this paper the quantitative metrology of even aberrations in a lithography tens is described along with it demonstration of an application of the grating reticle for a krypton fluoride excimer laser scanner with a numerical aperture (NA) of 0.73. Variation of the grating period along with a small-opening stopper inserted into the illuminator enlarge the measurable range of the pupil radius. The measurement technique described in this paper achieves high accuracy which is sufficient for small aberration lenses in state-of-the-art scanners.
引用
收藏
页码:6316 / 6322
页数:7
相关论文
共 17 条
[1]   Simulations and experiments with the phase shift focus monitor [J].
Brunner, TA ;
Mih, RD .
OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 :236-243
[2]  
BRUNNER TA, 1994, P SOC PHOTO-OPT INS, V2197, P541, DOI 10.1117/12.175449
[3]   Novel aberration monitor for optical lithography [J].
Dirksen, P ;
Juffermans, C ;
Pellens, R ;
Maenhoudt, M ;
De Bisschop, P .
OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 :77-86
[4]   Measurement of astigmatism in microlithography lenses [J].
Kirk, JP .
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 :848-854
[5]  
KIRK JP, 1991, P SOC PHOTO-OPT INS, V1463, P282, DOI 10.1117/12.44788
[6]   Measurement of spherical aberration utilizing an alternating phase shift mask [J].
Nakao, S ;
Nakae, A ;
Sakai, J ;
Miura, T ;
Tatsu, S ;
Tsujita, K ;
Wakamiya, W .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11) :5949-5955
[7]   Measurement method for odd component of aberration function utilizing alternating phase shift mask [J].
Nakao, S ;
Miyazaki, J ;
Tsujita, K ;
Wakamiya, W .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :6709-6713
[8]   Aberration measurement from specific photolithographic images: a different approach [J].
Nomura, H ;
Tawarayama, K ;
Kohno, T .
APPLIED OPTICS, 2000, 39 (07) :1136-1147
[9]   A novel technique for measuring defocus with phase shift gratings on a photomask [J].
Nomura, H .
OPTICAL REVIEW, 2001, 8 (03) :184-190
[10]  
NOMURA H, 2000, Patent No. 6011611