Top gating of epitaxial (Bi1-xSbx)2Te3 topological insulator thin films

被引：34

作者：

Yang, Fan ^{[1
,2
]}

Taskin, A. A. ^{[2
]}

Sasaki, Satoshi ^{[2
]}

Segawa, Kouji ^{[2
]}

Ohno, Yasuhide ^{[2
]}

Matsumoto, Kazuhiko ^{[2
]}

Ando, Yoichi ^{[2
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 16期

关键词：

SURFACE; TRANSPORT;

D O I：

10.1063/1.4873397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here, we report a method to fabricate highly efficient top gates on epitaxially grown (Bi1-xSbx)(2)Te-3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiNx dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples. (C) 2014 AIP Publishing LLC.

引用

页数：5

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