Analysis of SiC Deposition Rate in a Tubular Hot-Wall Reactor with Polymeric Source Using the DoE Method

被引：1

作者：

Keikha, A. Jamali ^{[1
]}

Sheikholeslami, T. Fanaei ^{[2
]}

Behzadmehr, A. ^{[1
]}

机构：

[1] Univ Sistan & Baluchestan, Dept Mech Engn, Zahedan 98164161, Iran

[2] Univ Sistan & Baluchestan, Fac Elect & Comp Engn, Zahedan 98164161, Iran

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 06期

关键词：

CVD; SiC; numerical study; DoE; optimization; CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; TEMPERATURE; QUALITY;

D O I：

10.1007/s11664-012-2463-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atmospheric-pressure chemical vapor deposition of silicon carbide in a tubular hot-wall reactor using a polymeric source was studied. A three-dimensional model of the reactor was solved numerically based on the finite-volume method. To achieve the best desired conditions, the effects of substrate temperature, mass fraction of polycarbosilane (-Si[CH3](2)-), inlet velocity, and substrate location on the SiC deposition rate were considered. These effects were investigated to obtain the optimum conditions by using the design of experiments (DoE) method. Finally, several contours are presented to help designers find suitable reactor conditions for higher performance.

引用

页码：931 / 938

页数：8

共 16 条

[1] A MODEL OF SILICON-CARBIDE CHEMICAL VAPOR-DEPOSITION [J].