Single-photon emission from cubic GaN quantum dots

被引：45

作者：

Kako, Satoshi ^{[1
]}

Holmes, Mark ^{[2
]}

Sergent, Sylvain ^{[2
]}

Buerger, Matthias ^{[3
]}

As, Donat J. ^{[3
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Paderborn, Dept Phys, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1063/1.4858966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and isolated emission peaks from these quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4K. The estimated g((2))[0] value is 0.25, which becomes 0.05 when corrected for background and detector dark counts. We have also observed the single-photon nature of the emission up to 100K (g((2))[0] = 0.47). These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures. (C) 2014 AIP Publishing LLC.

引用

页数：3

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