Effect of Bi3+substitution on structural and electrical properties of polycrystalline NiWO4nanoparticles

被引：4

作者：

Hitha, H. ^{[1
,2
]}

John, Mathew ^{[1
]}

Jose, Anjaly ^{[1
]}

Kuriakose, Soumya ^{[3
]}

Varghese, Thomas ^{[1
]}

机构：

[1] Nirmala Coll, Dept Phys, Nanosci Res Ctr NSRC, Muvattupuzha 686661, Kerala, India

[2] Newman Coll Educ, Dept Phys, Thodupuzha 685584, Kerala, India

[3] St Peters Coll, Dept Phys, Kolencherry 682311, Kerala, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 23期

关键词：

TRANSITION-METAL TUNGSTATES; NIWO4; NANOSTRUCTURE; DIELECTRIC-CONSTANT; CATHODE MATERIAL; CONDUCTIVITY; PERFORMANCE; NICKEL; OXIDE; SPECTROSCOPY; IMPEDANCE;

D O I：

10.1007/s10854-020-04630-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pristine- and Bi3+-doped NiWO(4)nanoparticles are synthesized by direct chemical precipitation. The structural properties are investigated using various characterization techniques. The electrical properties of pure and Bi3+-doped NiWO(4)samples are analysed with the help of dielectric permittivity, dissipation factor, impedance and electric modulus. Nyquist plots along with the equivalent circuits are used to analyse the relaxation and conduction mechanism of pure and Bi-doped NiWO4. Doping of Bi(3+)ion changes the structural and electrical properties of NiWO(4)samples. With Bi(3+)doping, the conductivity of NiWO(4)is increased along with variation in the conduction mechanism. Current work constitutes the first report on the study of electrical properties of Bi3+-doped NiWO(4)nanoparticles.

引用

页码：21180 / 21192

页数：13

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