Ferromagnetism in a quantum Hall system due to exchange enhancement in a GaInAs quantum well

被引：1
|
作者：
Nachtwei, G
Manolescu, A
Nestle, N
Künzel, H
机构：
[1] Tech Univ Braunschweig, Phys Tech Inst, D-38106 Braunschweig, Germany
[2] Inst Natl Fiz Mat, Bucharest, Romania
[3] Univ Leipzig, Abt Grenzflachenphys, D-04103 Leipzig, Germany
[4] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
quantum Hall effect; ferromagnetism; nonequilibrium transport;
D O I：
10.1016/S1386-9477(01)00265-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated Ga0.47In0.53As/Al0.48In0.52As quantum well structures at magnetic fields close to the filling factor 1. At the critical current. a bistable and abrupt switching (transition width less than 4 ppm with respect to the filling factor) between quantum Hall conduction and dissipative conduction was observed at filling factors 1 < v < 1.5. As confirmed by Hartree-Fock calculations. we attribute this switching to a feedback effect between the current-dependent population of different spin levels and the exchange-enhanced spin gap, The effect is accompanied by a ferromagnetic memory of the spin polarization when changing the external magnetic field. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：20 / 23
页数：4
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