Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping

被引：80

作者：

Deng, Z. ^{[1
,2
]}

Zhao, K. ^{[1
,2
]}

Gu, B. ^{[3
,4
]}

Han, W. ^{[1
,2
]}

Zhu, J. L. ^{[1
,2
]}

Wang, X. C. ^{[1
,2
]}

Li, X. ^{[1
,2
]}

Liu, Q. Q. ^{[1
,2
]}

Yu, R. C. ^{[1
,2
]}

Goko, T. ^{[5
]}

Frandsen, B. ^{[5
]}

Liu, L. ^{[5
]}

Zhang, Jinsong ^{[6
]}

Wang, Yayu ^{[6
]}

Ning, F. L. ^{[7
]}

Maekawa, S. ^{[3
,4
]}

Uemura, Y. J. ^{[5
]}

Jin, C. Q. ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[4] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[5] Columbia Univ, Dept Phys, New York, NY 10027 USA

[6] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[7] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 08期

基金：

美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

III-V SEMICONDUCTORS; MAGNETOTRANSPORT PROPERTIES; MAGNETIC SEMICONDUCTORS; TRANSPORT-PROPERTIES; (GA; MN)AS; OXIDES; LIZNAS; GAAS;

D O I：

10.1103/PhysRevB.88.081203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the discovery of a diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn, Mn) P was found to be a p-type ferromagnetic semiconductor with excess lithium providing charge doping. First-principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism with Curie temperature up to 34 K is achieved while the system still shows semiconducting transport behavior.

引用

页数：5

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