Formation of TiO2-xFx compounds in fluorine-implanted TiO2

被引：110

作者：

Yamaki, T ^{[1
]}

Sumita, T ^{[1
]}

Yamamoto, S ^{[1
]}

机构：

[1] Japan Atom Energy Res Inst, Takasaki Radiat Chem Res Estab, Dept Mat Dev, Gunma 3701292, Japan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 01期

关键词：

D O I：

10.1023/A:1014282225859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

F ions were implanted in TiO2 rutile single crystals. The effects of subsequent thermal annealing were investigated by Rutherford backscattering and channeling (RBS-C) studies, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). Optically polished single-crystalline TiO2 with a crystallographic axis was used for the analysis. The method enabled dopants to be introduced in a controlled manner at specific locations to realize impurity concentration gradients in TiO2.

引用

页码：33 / 35

页数：3

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