Formation of TiO2-xFx compounds in fluorine-implanted TiO2

被引：110
作者：
Yamaki, T [1 ]
Sumita, T [1 ]
Yamamoto, S [1 ]
机构：
[1] Japan Atom Energy Res Inst, Takasaki Radiat Chem Res Estab, Dept Mat Dev, Gunma 3701292, Japan
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 01期
关键词：
D O I：
10.1023/A:1014282225859
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
F ions were implanted in TiO2 rutile single crystals. The effects of subsequent thermal annealing were investigated by Rutherford backscattering and channeling (RBS-C) studies, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). Optically polished single-crystalline TiO2 with a crystallographic axis was used for the analysis. The method enabled dopants to be introduced in a controlled manner at specific locations to realize impurity concentration gradients in TiO2.
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页码：33 / 35
页数：3
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