Specific resistance of Pd/Ir interfaces

被引:8
作者
Acharyya, R. [1 ]
Nguyen, H. Y. T. [1 ]
Loloee, R. [1 ]
Pratt, W. P., Jr. [1 ]
Bass, J. [1 ]
Wang, Shuai [2 ]
Xia, Ke [2 ]
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
基金
美国国家科学基金会;
关键词
electric resistance; interface structure; iridium; lattice constants; multilayers; palladium; SPIN-MEMORY LOSS; MAGNETIC MULTILAYERS; PERPENDICULAR MAGNETORESISTANCE; NANOWIRES; PD;
D O I
10.1063/1.3072365
中图分类号
O59 [应用物理学];
学科分类号
摘要
From measurements of the current-perpendicular-to-plane total specific resistance (AR=area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir)=1.02 +/- 0.06 f Omega m(2), for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations (including only spd orbitals) give for perfect interfaces 2AR(Pd/Ir) (perf)=1.21 +/- 0.1 f Omega m(2), and for interfaces composed of 2 ML of a random 50%-50% alloy 2AR(Pd/Ir) (50/50)=1.22 +/- 0.1 f Omega m(2). Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2AR(Pd/Ir) (perf)=1.10 +/- 0.1 f Omega m(2) and 2AR(Pd/Ir) (50-50)=1.13 +/- 0.1 f Omega m(2), values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs.
引用
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页数:3
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