The determination of on-wafer noise parameters at W-band

被引：1
|
作者：
Alam, TA
Pollard, RD
Snowden, CM
机构：
来源：
27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II | 1997年
关键词：
D O I：
10.1109/EUMA.1997.337873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new procedure for determining the noise parameters of on-wafer devices at W-band is presented. In this procedure the noise parameters of the device (DUT) are de-embedded using correlation matrices. The first reported noise parameter results for an on-wafer attenuator at 94GHz are also presented. These measured noise parameters show good agreement to those calculated from the DUT's scattering parameters.
引用
收藏
页码：687 / 691
页数：5
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