Si-adsorption induced phase transition on the 3C-SiC(001) surface

被引：4
|
作者：
Kitamura, J
Hara, S
Okushi, H
Yoshida, S
Misawa, S
Kajimura, K
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Fac Mat Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
SURFACE SCIENCE | 1999年 / 433卷
关键词：
adsorption kinetics; chemisorption; epitaxy; scanning tunneling microscopy; silicon carbide; surface relaxation and reconstruction;
D O I：
10.1016/S0039-6028(99)00530-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The formation of Si-rich surfaces on the 3C-SiC(001) crystal using Si molecular beam epitaxy has been investigated using scanning tunneling microscopy. We observed a surface phase transition from the c(4 x 2) reconstruction to the (3 x 2) reconstruction by the adsorption of Si atoms. The adsorbed atoms formed one-dimensional (1D) strings, followed by narrowing the width of the adjacent strings with increasing adsorption. We find that the adsorption by narrowing of the 1D strings is in Langmuir-type adsorption. The Si adsorption saturated at the surface with (3 x 2) reconstruction having the Si coverage of 5/3 monolayer. No Si island was observed on the saturated (3 x 2) surface. We discuss the Si adsorption mechanism in terms of the structural phase transition. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：465 / 469
页数：5
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