Application-driven device/circuit co-simulation framework for power MOSFET design and technology development

被引：0

作者：

Sarkar, Tirthajyoti ^{[1
]}

Challa, Ashok ^{[1
]}

Huang, Kirk ^{[2
]}

Venkatraman, Prasad ^{[2
]}

Probst, Dean ^{[3
]}

机构：

[1] ON Semicond, Power Solut Grp, Sunnyvale, CA 94089 USA

[2] ON Semicond, Power Solut Grp, Phoenix, AZ USA

[3] ON Semicond, Corp R&D, Proc Technol, Gresham, OR USA

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

Power MOSFET; circuit simulation; device design; low voltage; DrMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physics-based device-circuit co-simulation turns out to be an extremely valuable tool to guide and optimize process technology development and device design for high-performance power MOSFETs. It is particularly well-suited to the need of emerging trend of integration of discrete power devices and analog ICs in the same package. In this article, we outline the key features and benefits of such an integrated design framework.

引用

页码：288 / 291

页数：4