Electrical transport properties of Al-doped ZnO films

被引：11

作者：

Liu, Xin Dian ^{[1
]}

Liu, Jing ^{[1
]}

Chen, Si ^{[1
]}

Li, Zhi Qing ^{[1
]}

机构：

[1] Tianjin Univ, Dept Phys, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 263卷

关键词：

Transparent conducting oxide; Al-doped ZnO; Temperature dependence of resistivity; Metal-semiconductor transition; PULSED-LASER DEPOSITION; THIN-FILMS; DISORDERED SYSTEMS; OXIDE-FILMS; COULOMB GAP; TRANSPARENT; TEMPERATURE; CONDUCTION; GROWTH;

D O I：

10.1016/j.apsusc.2012.09.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We systematically investigated the electrical transport properties of 2% Al-doped ZnO films deposited at different temperatures by rf magnetron sputtering method. For film deposited at 650 K, the temperature behavior of resistivity obeys the Bloch-Gruneisen law, i.e., it behaves as metal in electrical transport properties. While the tunneling effect across the grain boundaries governs the temperature behaviors of resistivity of the films deposited at 550 and 600 K. In addition, we found that the temperature dependence of resistivity of 4% Al-doped ZnO films deposited at 600 and 650K also exhibit metallic characteristics. These observations provide strong experimental supports for the validity of the ab initio band structure results of Al-doped ZnO. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：486 / 490

页数：5

共 50 条

[41] Effect of oxygen flowrate on optical and electrical properties in Al doped ZnO thin films
Cao, P. J.
Han, S.
Liu, W. J.
Jia, F.
Zeng, Y. X.
Zhu, D. L.
Lu, Y. M.
MATERIALS TECHNOLOGY, 2014, 29 (06) : 336 - 340
[42] Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films
Wang, Jinzhao
Ni, Dongfang
Zhang, Tianjin
Wang, Duofa
Liang, Kun
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 120 (04): : 1635 - 1642
[43] Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films
Zhou, H. B.
Zhang, H. Y.
Tan, M. L.
Wang, Z. G.
SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (05) : 644 - 650
[44] Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO
Kim, Chang Oh
Shin, Dong Hee
Kim, Sung
Choi, Suk-Ho
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (04) : 599 - 602
[45] Influence of ZnO Cap Layer Morphology on the Electrical Properties and Thermal Stability of Al-Doped ZnO Films
Zhang, Yufeng
Fei, Ziqi
Huang, Huang
Lu, Tieyu
Mu, Rui
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (16):
[46] Characteristics of the orientation distribution and carrier transport of polycrystalline Al-doped ZnO films prepared by direct current magnetron sputtering
Nomoto, Junichi
Makino, Hisao
Yamamoto, Tetsuya
THIN SOLID FILMS, 2017, 644 : 33 - 40
[47] Transport characteristics of thermally degraded ZnO films doped with Al
Kim, W. M.
Jeong, J. -H.
Park, J. K.
CURRENT APPLIED PHYSICS, 2014, 14 (05) : 691 - 696
[48] Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity
Dasgupta, Neil P.
Neubert, Sebastian
Lee, Wonyoung
Trejo, Orlando
Lee, Jung-Rok
Prinz, Fritz B.
CHEMISTRY OF MATERIALS, 2010, 22 (16) : 4769 - 4775
[49] Study of Electrical, Optical and Structural Properties of Al-Doped ZnO Thin Films on PEN Substrates
Agarwal, Mohit
Modi, Pankaj
Dusane, R. O.
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (02)
[50] Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films
Potlog, T.
Lungu, I.
Raevschi, S.
Botnariuc, V.
Robu, S.
Worasawat, S.
Mimura, H.
4TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, ICNBME-2019, 2020, 77 : 83 - 87

← 1 2 3 4 5 →