Single-cycle azimuthal angle dependence of terahertz radiation from (100) n-type InP

被引：14

作者：

Hargreaves, S. ^{[1
]}

Lewis, R. A. ^{[1
]}

机构：

[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

关键词：

III-V semiconductors; indium compounds; optical constants; permittivity; rectification; semiconductor doping; submillimetre wave spectra; time-domain analysis; twin boundaries;

D O I：

10.1063/1.3046287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed that the terahertz power emitted by (100) n-type InP exhibits a single maximum and a single minimum as the crystal is rotated through 360 degrees about its surface normal. This stands in contrast to other semiconductor terahertz emitters for which two, three, or four maxima per rotation have been observed. We have investigated the terahertz emission as a function of sample doping, optical excitation fluence, and applied in-plane magnetic field. The data cannot be accounted for by bulk optical rectification. We suggest that the origin of the phenomenon may be related to crystal twinning.

引用

页数：3

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