Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

被引：94

作者：

Tetienne, J. -P. ^{[1
]}

de Gille, R. W. ^{[1
]}

Broadway, D. A. ^{[1
,2
]}

Teraji, T. ^{[3
]}

Lillie, S. E. ^{[1
,2
]}

McCoey, J. M. ^{[1
]}

Dontschuk, N. ^{[1
,2
]}

Hall, L. T. ^{[1
]}

Stacey, A. ^{[1
,2
]}

Simpson, D. A. ^{[1
]}

Hollenberg, L. C. L. ^{[1
,2
]}

机构：

[1] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

[2] Univ Melbourne, Sch Phys, Ctr Quantum Computat & Commun Technol, Melbourne, Vic 3010, Australia

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

NUCLEAR-MAGNETIC-RESONANCE; SPECTROSCOPY; PHYSICS; SENSOR;

D O I：

10.1103/PhysRevB.97.085402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centers in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature, and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centers. We find that, for the energy (4-30 keV) and dose (5 x 10(11)-10(13) ions/cm(2)) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at >= 1100 degrees C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving approximate to 10-17 nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centers for high-sensitivity sensing and imaging applications.

引用

页数：11

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