3-D Analytical Modeling and comprehensive analysis of SCEs of a high-K gate stack dual-material tri-gate Silicon-On-Insulator MOSFET with dual-material bottom gate

This present work focuses on physics based 3-D analytical model derivation of the proposed dual material tri-gate Silicon On Insulator MOSFET with a dual-material bottom gate. The popular parabolic potential approximation method with suitable boundary conditions has been used to solve the 3-D Poisson's equation in the channel region. Surface potential model is then utilized to develop the electric field distribution expression of the present model. In addition, the immunity of the device towards the undesirable Short Channel Effects (SCEs) including threshold voltage roll-off (TVRO), Drain-induced barrier lowering (DIBL), Hot carrier effects (HCE) has been studied in detail. The model results obtained are in close agreement with SILVACO ATLAS based simulation data, thus establishing the accuracy of our derived analytical model.