On the nitridation of silicon by low energy nitrogen bombardment

被引：0

作者：

Petravic, M ^{[1
]}

Williams, JS ^{[1
]}

Conway, M ^{[1
]}

Deenapanray, PNK ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27 degrees. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface. (C) 1998 American Institute of Physics. [S0003-6951(98)04235-1].

引用

页码：1287 / 1289

页数：3

共 16 条

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