Energy-Efficient and Metastability-Immune Resilient Circuits for Dynamic Variation Tolerance

被引:244
作者
Bowman, Keith A. [1 ]
Tschanz, James W. [1 ]
Kim, Nam Sung [1 ]
Lee, Janice C. [1 ]
Wilkerson, Chris B. [1 ]
Lu, Shih-Lien L. [1 ]
Karnik, Tanay [1 ]
De, Vivek K. [1 ]
机构
[1] Intel Corp, Hillsboro, OR 97124 USA
关键词
Dynamic variations; error correction; error detection; error-detection sequential; error recovery; instruction replay; parameter variations; resilient circuits; resilient design; supply voltage droop; temperature variation; timing errors; variation tolerance;
D O I
10.1109/JSSC.2008.2007148
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 65 nm resilient circuit test-chip is implemented with timing-error detection and recovery circuits to eliminate the clock frequency guardband from dynamic supply voltage (V-CC) and temperature variations as well as to exploit path-activation probabilities for maximizing throughput. Two error-detection sequential (EDS) circuits are introduced to preserve the timing-error detection capability of previous EDS designs while lowering clock energy and removing datapath metastability. One EDS circuit is a dynamic transition detector with a thue-borrowing datapath latch (TDTB). The other EDS circuit is a double-sampling static design with a time-borrowing datapath latch (DSTB). In comparison to previous EDS designs, TDTB and DSTB redirect the highly complex metastability problem from both the datapath and error path to only the error path, enabling a drastic simplification in managing metastability. From a survey of various EDS circuit options, TWIT represents the lowest clock energy EDS circuit known; DSTB represents the lowest clock energy static-EDS circuit with SER protection known. Error-recovery circuits are introduced to replay failing instructions at lower clock frequency to guarantee correct functionality. Relative to conventional circuits, test-chip measurements demonstrate that resilient circuits enable either 25%-32% throughput gain at equal V-CC or at least 17% V-CC reduction at equal throughput, corresponding to 31%-37% total power reduction.
引用
收藏
页码:49 / 63
页数:15
相关论文
共 20 条
[1]   Circuit failure prediction and its application to transistor aging [J].
Agarwal, Mridul ;
Paul, Bipul C. ;
Zhang, Ming ;
Mitra, Subhasish .
25TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2007, :277-+
[2]   A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm2 SRAM cell [J].
Bai, P ;
Auth, C ;
Balakrishnan, S ;
Bost, M ;
Brain, R ;
Chikarmane, V ;
Heussner, R ;
Hussein, M ;
Hwang, J ;
Ingerly, D ;
James, R ;
Jeong, J ;
Kenyon, C ;
Lee, E ;
Lee, SH ;
Lindert, N ;
Liu, M ;
Ma, Z ;
Marieb, T ;
Murthy, A ;
Nagisetty, R ;
Natarajan, S ;
Neirynck, J ;
Ott, A ;
Parker, C ;
Sebastian, J ;
Shaheed, R ;
Sivakurnar, S ;
Steigerwald, J ;
Tyagi, S ;
Weber, C ;
Woolery, B ;
Yeoh, A ;
Zhang, K ;
Bohr, M .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :657-660
[3]  
Blaauw D., 2008, IEEE INT SOLID STATE, P400
[4]  
BOWMAN KA, 2008, IEEE INT SOL STAT CI, P402
[5]   A self-tuning DVS processor using delay-error detection and correction [J].
Das, S ;
Roberts, D ;
Lee, S ;
Pant, S ;
Blaauw, D ;
Austin, T ;
Flautner, K ;
Mudge, T .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (04) :792-804
[6]  
DIKE C, 1999, IEEE J SOLID STA JUN, P849
[7]  
Ernst D, 2003, 36TH INTERNATIONAL SYMPOSIUM ON MICROARCHITECTURE, PROCEEDINGS, P7
[8]   A 90-nm variable frequency clock system for a power-managed Itanium Architecture processor [J].
Fischer, T ;
Desai, J ;
Doyle, B ;
Naffziger, S ;
Patella, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (01) :218-228
[9]  
Franco P., 1994, Proceedings 12th IEEE VLSI Test Symposium (Cat. No.94TH0645-2), P167, DOI 10.1109/VTEST.1994.292318
[10]  
FRANCO P, 1999, P IEEE INT TEST C OC, P798