Optical properties of ZnO thin films prepared by sol-gel process

被引：45

作者：

Petersen, J. ^{[1
]}

Brimont, C. ^{[1
]}

Gallart, M. ^{[1
]}

Cregut, O. ^{[1
]}

Schmerber, G. ^{[1
]}

Gilliot, P. ^{[1
]}

Hoenerlage, B. ^{[1
]}

Ulhaq-Bouillet, C. ^{[1
]}

Rehspringer, J. L. ^{[1
]}

Leuvrey, C. ^{[1
]}

Colis, S. ^{[1
]}

Slaoui, A. ^{[2
]}

Dinia, A. ^{[1
]}

机构：

[1] ULP ECPM, CNRS, IPCMS UMR 7504, Inst Phys & Chim Mat Strasbourg, F-67034 Strasbourg 2, France

[2] InESS CNRS ULP, F-67037 Strasbourg 2, France

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 02期

关键词：

ZnO; Photoluminescence; Sol-gel; Thin film; Excitons; PHOTOLUMINESCENCE; FERROMAGNETISM; EXCITON;

D O I：

10.1016/j.mejo.2008.07.061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present study focused on ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates. ZnO thin films have a hexagonal wurtzite structure with a grain diameter about 50nm. Optical properties were determined by photoluminescence (PL) and absorption spectroscopy. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, two transitions were observed by PL One near to the prohibited energy band in ultraviolet (UV) region and the other centered at 640 nm, characteristic of the electronic defects in the band-gap. The spectrum at 6 K is dominated by donor-bound exciton lines and donor-acceptor pair transition. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of high-quality thin films. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：239 / 241

页数：3

共 30 条

[1] Optimization of the electrical properties of magnetron sputtered aluminum-doped zinc oxide films for opto-electronic applications [J].

Agashe, C ;

Kluth, O ;

Schöpe, G ;

Siekmann, H ;

Hüpkes, J ;

Rech, B .

THIN SOLID FILMS, 2003, 442 (1-2) :167-172

[2] No ferromagnetism in Mn doped ZnO semiconductors [J].

Alaria, J ;

Turek, P ;

Bernard, M ;

Bouloudenine, M ;

Berbadj, A ;

Brihi, N ;

Schmerber, G ;

Colis, S ;

Dinia, A .

CHEMICAL PHYSICS LETTERS, 2005, 415 (4-6) :337-341

[3] Extrinsic origin of ferromagnetism in ZnO and Zn0.9Co0.1O magnetic semiconductor films prepared by sol-gel technique [J].

Belghazi, Y. ;

Schmerber, G. ;

Colis, S. ;

Rehspringer, J. L. ;

Dinia, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[4] Antiferromagnetism in bulk Zn1-xCoxO magnetic semiconductors prepared by the coprecipitation technique -: art. no. 052501 [J].

Bouloudenine, M ;

Viart, N ;

Colis, S ;

Kortus, J ;

Dinia, A .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[5] Bulk Zn1-xCoxO magnetic semiconductors prepared by hydrothermal technique [J].

Bouloudenine, M ;

Viart, N ;

Colis, S ;

Dinia, A .

CHEMICAL PHYSICS LETTERS, 2004, 397 (1-3) :73-76

[6] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers [J].

Chen, YF ;

Tuan, NT ;

Segawa, Y ;

Ko, H ;

Hong, S ;

Yao, T .

APPLIED PHYSICS LETTERS, 2001, 78 (11) :1469-1471

[7] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[8]

DINLA A, 2005, J APPL PHYS

[9] Oscillator strengths of A, B, and C excitons in ZnO films -: art. no. 201310 [J].

Gil, B .

PHYSICAL REVIEW B, 2001, 64 (20)

[10] FELDEFFEKT UND PHOTOLEITUNG AN ZNO-EINKRISTALLEN [J].

HEILAND, G .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) :155-168

← 1 2 3 →