Ohmic contacts to n-type GaSb grown on GaAs by the Interfacial Misfit Dislocation technique

被引：7

作者：

Rahimi, N. ^{[1
]}

Aragon, A. A. ^{[1
]}

Romero, O. S. ^{[1
]}

Kim, D. M.

Traynor, N. B. J.

Rotter, T. J. ^{[1
]}

Balakrishnan, G. ^{[1
]}

Mukherjee, S. D. ^{[1
]}

Lester, L. F. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II | 2013年 / 8620卷

关键词：

Ohmic contacts; GaSb; GaAs; Interfacial Misfit Dislocation; TLM pattern; Specific contact resistance; MOLECULAR-BEAM EPITAXY; GALLIUM ANTIMONIDE; LASERS;

D O I：

10.1117/12.2003392

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped similar to 1e17 cm(-3) p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Omega-mm and specific contact resistances of < 2e-6 Omega-cm(2) have been observed.

引用

页数：12

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