Realization of High Voltage (> 700 V) in New SOI Devices With a Compound Buried Layer

被引：41

作者：

Luo, Xiaorong ^{[1
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

Fu, Daping ^{[1
]}

Zhan, Zhan ^{[1
]}

Chen, Kaifeng ^{[1
]}

Hu, Shengdong ^{[1
]}

Zhang, Zhengyuan ^{[1
]}

Feng, Zhicheng ^{[1
]}

Yan, Bin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

关键词：

Electric fields; high-voltage techniques; power semiconductor devices; semiconductor-insulator-semiconductor devices; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LED.2008.2007307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel silicon-on-insulator (SOI) high-voltage device with a compound buried layer (CBL SOI) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of E-I2 is increased from about 78 to 454 V/mu m by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BV. Experimentally, 762-V SOT diode is obtained. The maximal temperature of CBL SOT diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect.

引用

页码：1395 / 1397

页数：3

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Realization of High Voltage (&gt; 700 V) in New SOI Devices With a Compound Buried Layer

Realization of High Voltage (> 700 V) in New SOI Devices With a Compound Buried Layer