Realization of High Voltage (> 700 V) in New SOI Devices With a Compound Buried Layer

被引：41
作者：
Luo, Xiaorong [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
Fu, Daping [1 ]
Zhan, Zhan [1 ]
Chen, Kaifeng [1 ]
Hu, Shengdong [1 ]
Zhang, Zhengyuan [1 ]
Feng, Zhicheng [1 ]
Yan, Bin [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期
关键词：
Electric fields; high-voltage techniques; power semiconductor devices; semiconductor-insulator-semiconductor devices; silicon-on-insulator (SOI) technology;
D O I：
10.1109/LED.2008.2007307
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel silicon-on-insulator (SOI) high-voltage device with a compound buried layer (CBL SOI) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of E-I2 is increased from about 78 to 454 V/mu m by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BV. Experimentally, 762-V SOT diode is obtained. The maximal temperature of CBL SOT diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect.
引用
收藏
页码：1395 / 1397
页数：3
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