Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

被引:16
作者
Alejo, T. [1 ]
Paulo, Pedro M. R. [2 ]
Merchan, M. D.
Garcia-Fernandez, Emilio [2 ,3 ]
Costa, Silvia M. B. [2 ]
Velazquez, M. M. [1 ]
机构
[1] Univ Salamanca, Fac Ciencias Quim, Dept Quim Fis, E-37008 Salamanca, Spain
[2] Univ Tecn Lisboa, Ctr Quim Estrutural, Inst Super Tecn, Av Rovisco Pais 1, P-1049001 Lisbon, Portugal
[3] Univ Granada, Fac Pharm, Dept Phys Chem, Campus Cartuja, Granada 18071, Spain
关键词
Quantum dots; Langmuir-blodgett films; Confocal fluorescence lifetime microscopy; Photoluminescence properties; EXCITED-STATE TRANSPORT; LANGMUIR-BLODGETT-FILMS; QUENCHING DYNAMICS; SURFACE; NANOPARTICLES; NANOCRYSTALS; FLUORESCENCE; EMISSION; LUMINESCENCE; CRYSTALLITES;
D O I
10.1016/j.jlumin.2016.11.002
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:113 / 120
页数:8
相关论文
共 49 条
[11]   Enhanced fluorescence emission from quantum dots on a photonic crystal surface [J].
Ganesh, Nikhil ;
Zhang, Wei ;
Mathias, Patrick C. ;
Chow, Edmond ;
Soares, J. A. N. T. ;
Malyarchuk, Viktor ;
Smith, Adam D. ;
Cunningham, Brian T. .
NATURE NANOTECHNOLOGY, 2007, 2 (08) :515-520
[12]   Characterization and 2D self-assembly of CdSe quantum dots at the air-water interface [J].
Gattás-Asfura, KM ;
Constantine, CA ;
Lynn, MJ ;
Thimann, DA ;
Ji, XJ ;
Leblanc, RM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (42) :14640-14646
[13]   ELECTRONIC EXCITED-STATE TRANSPORT IN SOLUTION [J].
GOCHANOUR, CR ;
ANDERSEN, HC ;
FAYER, MD .
JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (09) :4254-4271
[14]   Quenching Dynamics in CdSe Nanoparticles: Surface-Induced Defects upon Dilution [J].
Hartmann, Lucia ;
Kumar, Abhishek ;
Welker, Matthias ;
Fiore, Angela ;
Julien-Rabant, Carine ;
Gromova, Marina ;
Bardet, Michel ;
Reiss, Peter ;
Baxter, Paul N. W. ;
Chandezon, Frederic ;
Pansu, Robert B. .
ACS NANO, 2012, 6 (10) :9033-9041
[15]   Re-examination of the Size-Dependent Absorption Properties of CdSe Quantum Dots [J].
Jasieniak, Jacek ;
Smith, Lisa ;
van Embden, Joel ;
Mulvaney, Paul ;
Califano, Marco .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (45) :19468-19474
[16]   Signatures of Exciton Dynamics and Carrier Trapping in the Time-Resolved Photoluminescence of Colloidal CdSe Nanocrystals [J].
Jones, Marcus ;
Lo, Shun S. ;
Scholes, Gregory D. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (43) :18632-18642
[17]   Ligand effects on optical properties of CdSe nanocrystals [J].
Kalyuzhny, G ;
Murray, RW .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (15) :7012-7021
[18]  
Kem W., 1993, HDB SEMICONDUCTOR WA
[19]   THE EVOLUTION OF SILICON-WAFER CLEANING TECHNOLOGY [J].
KERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) :1887-1892
[20]   Electronic coupling and exciton energy transfer in CdTe quantum-dot molecules [J].
Koole, Rolf ;
Liljeroth, Peter ;
Donega, Celso de Mello ;
Vanmaekelbergh, Daniel ;
Meijerink, Andries .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (32) :10436-10441