Thickness effect on luminescent properties of sol-gel derived ZnO thin films

被引：9

作者：

Chia, C. H. ^{[1
]}

Tsai, W. C. ^{[1
]}

Chiou, J. W. ^{[1
]}

机构：

[1] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 81148, Taiwan

来源：

JOURNAL OF LUMINESCENCE | 2013年 / 136卷

关键词：

Sol-gel; ZnO; Photoluminescence; Exciton-phonon interaction; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

D O I：

10.1016/j.jlumin.2012.11.019

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We studied the photoluminescence (PL) characteristics of ZnO thin films grown by sot-gel spin-coating technique. The ZnO thin films are preferentially oriented along the c-axis perpendicular to the substrate. The radiative recombination of donor-bound excitons dominates the low-temperature PL spectra. Defect-related transitions enhance as thickness decreases. The lineshape of room-temperature PL spectra from sot-gel deposited ZnO thin film is greatly influenced by exciton-phonon interaction, which is governed by defects in the thin films. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：160 / 164

页数：5

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