The influence of p-doping on the temperature sensitivity of 1.3μm quantum dot lasers

被引：0
作者：
Massé, NF [1 ]
Marko, IP [1 ]
Sweeney, SJ [1 ]
Adams, AR [1 ]
Hatori, N [1 ]
Sugarawa, M [1 ]
机构：
[1] Univ Surrey, Sch Elect & Phys Sci, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
来源：
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | 2005年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：603 / 604
页数：2
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