Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range

被引：1

作者：

Tan, WK

Wong, HY

Kelly, AE

Sorel, M

Marsh, JH

Bryce, AC

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[2] 2 Intense Ltd, Glasgow G7 0BN, Lanark, Scotland

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 25期

关键词：

D O I：

10.1049/el:20053431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The passive modelocked operation of an InGaAsP/InP laser diode, with a novel design of adaptable saturable absorber, up to an operating temperature of 75 degrees C, is reported. To the authors' best knowledge, this is the first demonstration of high-temperature operation of a passively modelocked laser diode. The effect of the operating temperature on the operating frequency and the tuning range is described.

引用

页码：1380 / 1382

页数：3

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