Enhanced thermoelectric properties of thermal treated Sb2Te3 thin films

被引：32

作者：

Hong, Ji-Eun ^{[1
]}

Lee, Sang-Kwon ^{[2
]}

Yoon, Soon-Gil ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[2] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 583卷

基金：

新加坡国家研究基金会;

关键词：

Sb2Te3 thin films; Radio-frequency sputtering; Theromoelectric properties; Oxygen incorporation; Annealing temperature; GE2SB2TE5; DEVICES; MERIT;

D O I：

10.1016/j.jallcom.2013.08.164

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The 500 nm-thick Sb2Te3 films were deposited onto SiO2/Si substrates using rf magnetron sputtering and annealment at various temperatures for 5 min under an Ar atmosphere. Oxygen incorporated into the films contributed to the compositional stability at an annealing temperature of 320 degrees C. Samples annealed at 320 degrees C exhibited conductivity of 1824 S/cm, Seebeck coefficient of 283 mu V/K, and a thermal conductivity of 3.0 +/- 0.20 W/mK at room temperature, and thermoelectric figure of merit (ZT) of approximately 1.5. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：111 / 115

页数：5

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