Boron carbonitride nanojunctions

被引：45
作者：
Guo, JD
Zhi, CY
Bai, XD
Wang, EG
机构：
[1] Chinese Acad Sci, Inst Phys, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期
关键词：
D O I：
10.1063/1.1431692
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. (C) 2002 American Institute of Physics.
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页码：124 / 126
页数：3
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