Effect of Magnetic Field on the Current-Voltage Characteristics of PbSnTe:In Films

被引：1

作者：

Epov, Vladimir S. ^{[1
]}

Klimov, Alexander E. ^{[2
]}

Shumsky, Vladimir N. ^{[2
]}

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk, Russia

来源：

EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS | 2008年

关键词：

narrow-gap semiconductor; magnetoresistance; injection from contacts; traps;

D O I：

10.1109/SIBEDM.2008.4585874

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Transport of charge carriers in Pb1-xSnxTe:In films at helium temperatures in regimes dominated by charge-carrier injection out of contacts is discussed. Data illustrating the effect of constant magnetic field on the injection currents are reported. Possible mechanisms of observed phenomena are discussed.

引用

页码：84 / +

页数：2

共 8 条

[1] Photosensitivity of Pb1-xSnxTe:In films in the terahertz region of the spectrum [J].

Akimov, A. N. ;

Erkov, V. G. ;

Kubarev, V. V. ;

Molodtsova, E. L. ;

Klimov, A. E. ;

Shumskii, V. N. .

SEMICONDUCTORS, 2006, 40 (02) :164-168

[2] Injection currents in narrow-gap (Pb1-xSnxTe):In insulators [J].

Akimov, AN ;

Erkov, VG ;

Klimov, AE ;

Molodtsova, EL ;

Suprun, SP ;

Shumsky, VN .

SEMICONDUCTORS, 2005, 39 (05) :533-538

[3]

KENTSIG V, 1960, FERROELECTRICS ANTIF, P236

[4]

KLIMOV AE, 2007, 8 INT WORKSH TUT EDM, P21

[5]

KLIMOV AE, 2008, 9 INT WORKSH TUT EDM

[6]

KOZHANOV A, 2004, 27 INT C PHYS SEM JU, P318

[7]

LAMPERT M, 1973, DEEP IMPURITIES SEMI

[8]

NASYBULLIN GA, 1983, FIZ TVERD TELA+, V25, P784

← 1 →