Exciton spectra, valence band splitting, and energy band structure of CuGaxIn1-xS2 and CuGaxIn1-xSe2 crystals

被引：26
作者：
Syrbu, NN
Tiginyanu, IM
Nemerenco, LL
Ursaki, VV [1 ]
Tezlevan, VE
Zalamai, VV
机构：
[1] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova
[2] Tech Univ Moldova, MD-2004 Kishinev, Moldova
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期
关键词：
semiconductors; optical properties;
D O I：
10.1016/j.jpcs.2005.09.029
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Exciton spectra are studied in CuGax In1-xS2 solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The crystal field and spin orbit valence band splitting is calculated as a function of X taking into account the energy position of excitonic lines. The energy band structure of CuGaxIn1-xS2 and CuGaxIn1-xS2 compounds is derived from optical spectra at photon energies higher than the fundamental band gap. The energies of optical transitions are tabulated for X values from 0 to 1. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1974 / 1977
页数：4
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