A Fully Integrated RF CMOS Front-End IC for Connectivity Applications

被引：7

作者：

Joo, Taehwan ^{[1
]}

Lee, Dong-Ho ^{[2
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon 305701, South Korea

[2] Hanbat Natl Univ, Dept Informat & Commun Engn, Daejeon 305719, South Korea

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2016年 / 63卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Bluetooth (BT); CMOS integrated circuits; front-end (FE) integrated circuit (FEIC); fully on-chip; integrated switches; linearization techniques; low-noise amplifiers (LNAs); power amplifiers (PAs); wireless local area network (WLAN) 802.11b/g/n/ac; POWER-AMPLIFIER; T/R SWITCH; NM CMOS;

D O I：

10.1109/TCSII.2016.2548259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated RF CMOS front-end (FE) IC (FEIC), which is fabricated with a 0.13-mu m bulk RF CMOS process for wireless local area network/Bluetooth (WLAN/BT) applications, is presented. The proposed FEIC includes a dual-mode power amplifier (PA), integrated switches, and a shared low-noise amplifier (LNA) without external matching networks. The proposed compact reconfigurable matching network satisfies the optimum matchings for a multimode PA and a shared LNA. Measurements showed a 16.2-dBm P-OUT, with a 6.7% power-added efficiency (PAE), at -34-dB error vector magnitude, with an 802.11ac signal source, with a high-power-mode WLAN PA. With a low-power-mode BT PA, it showed a 13.7-dBm P-OUT, with a 10.9% PAE, with a 2.1+EDR signal. The shared LNA has a 14.8-dB gain and a 3.6-dB noise figure. All the measurements were carried out, including integrated mode-change switches for time-division duplex operation without any digital predistortion.

引用

页码：1024 / 1028

页数：5

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