Integrated IGBT short-circuit protection structure: Design and optimization

被引：5
|
作者：
Caramel, C [1 ]
Austin, P [1 ]
Sanchez, JL [1 ]
Imbernon, E [1 ]
Breil, M [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 03期
关键词：
short-circuit protection; anode voltage sensor; IGBT; functional integration;
D O I：
10.1016/j.mejo.2005.09.028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends oil the flexible technological process developed for power structures and based on the functional integration concept [1]. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：249 / 256
页数：8
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