Resonant-cavity-enhanced UV metal-semiconductor-metal (MSM) photodetectors based on AlGaN system

被引：0
|
作者：
Kishino, K [1 ]
Yonemaru, M [1 ]
Kikuchi, A [1 ]
Toyoura, Y [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200111)188:1<321::AID-PSSA321>3.0.CO;2-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Resonant-cavity-enhanced ultraviolet metal-semiconductor-metal photodetectors were successfully fabricated in AlGaN system, for the first time. A 45 nm GaN light absorption layer was placed in the optical cavity composed by the multi-stacked Al0.06Ga0.94N/AlN (20 pairs) bottom-distributed-Bragg-reflector (DBR) and the ZrO2/SiO2 (two pairs) tc,p-DBR mirrors. In this structure, the enhancement of responsivity can be achieved by incorporating a multiple pass detection scheme. In the experiment, the responsivity was enhanced by the resonant cavity effect, selectively at 363 and 352 nm in wavelength, with a factor of about two, in contrast with the case without the top-DBR.
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页码：321 / 324
页数：4
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