Topological insulators based on HgTe

被引：22

作者：

Kvon, Z. D. ^{[1
,2
]}

Kozlov, D. A. ^{[1
,2
]}

Olshanetsky, E. B. ^{[1
]}

Gusev, G. M. ^{[3
]}

Mikhailov, N. N. ^{[1
]}

Dvoretsky, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Prosp Akad Lavrenteva 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Ul Pirogova 2, Novosibirsk 630090, Russia

[3] Univ Sao Paulo, Inst Fis, BR-13596017 Sao Paulo, SP, Brazil

来源：

PHYSICS-USPEKHI | 2020年 / 63卷 / 07期

基金：

俄罗斯科学基金会;

关键词：

topological insulators; edge state transport; quantum well; inverted energy spectrum; SURFACE-STATES; EDGE TRANSPORT; OSCILLATIONS;

D O I：

10.3367/UFNe.2019.10.038669

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility (up to 5 x 10(5) cm(2) V-1 s(-1)) of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov-de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.

引用

页码：629 / 647

页数：19

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