Photo-assisted metal-organic chemical vapor deposition of CaCu3Ti4O12 (CCTO) thin films

被引：10

作者：

Gupta, N. ^{[1
]}

McMillen, C. ^{[2
]}

机构：

[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA

[2] Clemson Univ, Dept Chem, Clemson, SC 29634 USA

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 05期

关键词：

Photo-assisted MOCVD; Calcium copper titanate; Thin film; Dielectric; DIELECTRIC-PROPERTIES; TECHNOLOGY; CONSTANT;

D O I：

10.1016/j.mssp.2013.03.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Calcium copper titanate (CaCu3Ti4O12) or CCTO is one of the most researched giant dielectric constant materials in recent years. In the present work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) has been used to prepare CCTO thin films on Si/SiO2 substrates. Key to this unique processing technique is the use of UV radiation as an additional source of energy in conjunction to the thermal energy. The given Photo-assisted MOCVD processing resulted in polycrystalline CCTO growth on a SiO2 surface. Powder X-ray diffraction and scanning electron microscopy were performed to analyze structural and compositional properties of the CCTO thin film. Ellipsometric measurements indicated a refractive index of 3.03 for the CCTO thin film. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1297 / 1302

页数：6

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