Impact of chemical treatment on the surface, structure, optical and electrical properties of SnS thin films

被引:18
作者
Reddy, N. Koteeswara [1 ]
Devika, M. [2 ]
Hahn, Yoon-Bong [3 ]
Gunasekhar, K. R. [4 ]
机构
[1] Indian Inst Sci, Ctr Nanosci & Engn CeNSE, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Aerosp Engn, Bangalore 560012, Karnataka, India
[3] Chonbuk Natl Univ, Sch Chem Engn & Technol, Jeonju 561756, South Korea
[4] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
关键词
SnS thin films; IV-VI semiconductors; Photovoltaic material; Chemical treated surfaces; Structural properties; PHYSICAL-PROPERTIES; SULFIDE; ELECTRODEPOSITION;
D O I
10.1016/j.apsusc.2012.12.085
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The impact of chemical treatment on the surface morphology and other physical properties of tin monosulphide (SnS) thin films have been investigated. The SnS films treated with selected organic solvents exhibited strong improvement in their crystalline-quality and considerable decrease in electrical resistivity. Particularly, the films treated with chloroform showed very low electrical resistivity of similar to 5 Omega cm and a low optical band gap of 1.81 eV as compared to untreated and treated SnS films with other chemicals. From these studies we realized that the chemical treatment of SnS films has strong impact on their surface morphology and also on other physical properties. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:317 / 322
页数:6
相关论文
共 33 条
[1]   Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells [J].
Avellaneda, David ;
Delgado, Guadalupe ;
Nair, M. T. S. ;
Nair, P. K. .
THIN SOLID FILMS, 2007, 515 (15) :5771-5776
[2]   Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100) [J].
Berkovits, VL ;
Ulin, VP ;
Losurdo, M ;
Capezzuto, P ;
Bruno, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (05) :G349-G353
[3]   Synthesis of a δ-SnS polymorph by electrodeposition [J].
Brownson, Jeffrey R. S. ;
Georges, Cecile ;
Levy-Clement, Claude .
CHEMISTRY OF MATERIALS, 2006, 18 (26) :6397-6402
[4]   Effect of deposition potential and bath temperature on the electrodeposition of SnS film [J].
Cheng, Shuying ;
Chen, Guonan ;
Chen, Yanqing ;
Huang, Cichang .
OPTICAL MATERIALS, 2006, 29 (04) :439-444
[5]   Thickness effect on the physical properties of evaporated SnS films [J].
Devika, M. ;
Reddy, N. Koteeswara ;
Ramesh, K. ;
Ganesan, R. ;
Gunasekhar, K. R. ;
Gopal, E. S. R. ;
Reddy, K. T. Ramakrishna .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) :H67-H73
[6]   Low resistive micrometer-thick SnS:Ag films for optoelectronic applications [J].
Devika, M. ;
Reddy, N. Koteeswara ;
Ramesh, K. ;
Gunasekhar, K. R. ;
Gopal, E. S. R. ;
Reddy, K. T. Ramakrishna .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (08) :G727-G733
[7]   Microstructure dependent physical properties of evaporated tin sulfide films [J].
Devika, M. ;
Reddy, K. T. Ramakrishna ;
Reddy, N. Koteeswara ;
Ramesh, K. ;
Ganesan, R. ;
Gopal, E. S. R. ;
Gunasekhar, K. R. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
[8]   Influence of annealing on physical properties of evaporated SnS films [J].
Devika, M. ;
Reddy, N. Koteeswara ;
Ramesh, K. ;
Gunasekhar, K. R. ;
Gopal, E. S. R. ;
Reddy, K. T. Ramakrishna .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) :1125-1131
[9]   Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films [J].
Devika, M. ;
Reddy, N. Koteeswara ;
Reddy, S. Venkatramana ;
Ramesh, K. ;
Gunasekhar, K. R. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (11) :1129-1134
[10]  
Edelstein A.S., 1996, NANOMATERIALS SYNTHE, P6