Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

被引：75

作者：

Srinivasan, V. S. S. ^{[1
]}

Chopra, S. ^{[1
]}

Karkare, P. ^{[1
]}

Bafna, P. ^{[1
]}

Lashkare, S. ^{[1
]}

Kumbhare, P. ^{[1
]}

Kim, Y. ^{[1
]}

Srinivasan, S. ^{[1
]}

Kuppurao, S. ^{[1
]}

Lodha, S. ^{[1
]}

Ganguly, Udayan ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期

关键词：

Bipolar resistance RAM (RRAM); punchthrough; selectore;

D O I：

10.1109/LED.2012.2209394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si: C process is used to deposit n(+)/p/n(+) layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of > 1 MA/cm(2) and high on/off current ratio of > 250 and > 4700 (at opposite polarities) are observed. A switching speed of < 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.

引用

页码：1396 / 1398

页数：3

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